High resolution TEM/EDS
Depth profiling using ToF-SIMS
Elemental spectroscopy RBS/NRA/HFS
Mechanical properties using Nanoindentor
Analysis of thin film thickness using XRR, XRD
Analysis of metals using XRF
Film topography using AFM
As the semiconductor industry advances through technology nodes, the need for higher resolution Transmission Electron Microscope becomes larger. High resolution TEM/EDS can measure conformity of CVD and DRIE along the trench walls.
Time-of-Flight Secondary Ion Mass
Spectrometry (PCA ToF-SIMS)
PCA is an orthogonal transformation to convert a set of observations of possibly correlated variables into principal components. The PCA ToF-SIMS can be widely used for the materials identification or mapping of polymers and other organic or bio materials.
Hydrogen Forward Scattering (HFS)
Nuclear Reaction Analysis (NRA)
The key advantage of RBS is non destructive compositional elemental analysis as a function of depth. HFS and NRA are modifications to RBS that improve the resolution of Hydrogen and light elements respectively.