Atomic imaging, elemental analysis, lattice spacing, depth profiling, void identification, void distribution along film depth, and crystalline structure
Total Luminous flux, Rx/Tx
6000 hours testing covers packages, arrays and module
LM79 & LM80
Typical Failure Mode
EOS (environment too hot)
Open circuit (plugged on wrong supply)
Emitter degraded and color changed (function failure)
Non-destructive and destructive, depackaging, cross-section, material identification like phosphor, and package analysis
Key Technology #1Transmission Electron Microscropy/Electron Dispersive Spectroscopy/Electron Energy Loss Spectroscopy (TEM/EDS/EELS)
As LED devices include complicated nanoscale thin film structures, TEM/EDS/EELS are critical techniques for quality control and failure analysis. Outermost Technology has established a set of services for LED device characterization and has been recently selected as a high-volume service provider by a world leading LED manufacturer.
Key Technology #2Positron Annihilation Lifetime Spectroscopy/Doppler Broadening Spectroscopy (PALS/DBS)
PALS/DBS are non-destructive spectroscopic techniques to study voids and defects in single crystalline materials. These techniques can identify the type and distribution of defects along the film’s depth. It is an ideal metrology for the LED industry.
Key Technology #3Principal Component Analysis Using
Time-of-Flight Secondary Ion Mass
Spectrometry (PCA-ToF SIMS)
PCA is an orthogonal transformation to convert a set of observations of possibly correlated variables into principal components. The PCA-ToF SIMS can be widely used for materials identification or for mapping (polymers, organics, or bio-materials}.
Key Technology #4Optical Induced Resistance Change (OBIRCH)
OBIRCH is a very powerful fault localization technique for IC’s. In Failure Analysis OBIRCH is commonly used to localize metal shorts, active area short, shorts in source, and drain wells.