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High Temperature Gate Bias (HTGB)

Equipment: Thermal Chamber-MSK-1050PR

Working Principle

  • High temperature gate bias stress the DUT
  • The devices are normally operated in a static mode or near the maximum oxide breakdown voltage levels
  • The bias condition bias the maximum number of gates in the device
  • 150 °C
  • Standard: JESD22-A108D

Technical Information

  • Perform the test on MOSFETs
  • Observe threshold-voltage in all states and stability
  • Exam drain leakage degradation by drain-source reverse bias stress

LED Factors for Current Density

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